中文摘要：
ZnO作为一种性能优异的光电材料,受到了世界各国研究人员的广泛关注。随着纳米科技的发展,低维ZnO纳米结构作为构筑柔性光电器件的基本单元吸引了大家的研究兴趣。但未经调控的ZnO存在着各种缺陷,通常不能直接应用。ZnO的带隙对光电子性质起着重要的作用,并决定着它们的应用。常通过掺杂方式调节带隙以实现新的应用。薄膜技术的进步使得柔性器件应运而生,比如可弯曲晶体管和可伸缩电路,这些技术的进步使得制造电子产品更加容易。然而,没有柔性材料的优化组合,是难以制造出更加完美的柔性器件。因此,想要实现ZnO在柔性器件中的应用,必须探索出适用于ZnO的柔性衬底材料。本研究正是基于此背景展开研究,采用简单水热法在双层柔性衬底上制备Ag-ZnO/PET-GR、In-ZnO/Cu-GR、Ag-ZnO/Cu-GR三种复合纳米结构,研究Ag、In掺杂浓度对结构和性能的影响,进而揭示掺杂ZnO/柔性衬底的复合结构演变、复合发光及光催化等性能以及相关机制。采用离子溅射结合低温水热法合成了不同Ag掺杂浓度Ag-ZnO/PET-GR复合结构。研究结果表明:ZnO表面形成了Ag金属颗粒负载,Ag成功进入ZnO晶格;随着Ag掺杂浓度的变化,ZnO形貌基本没有发生明显改变,均为纳米棒状结构,且随着Ag掺杂含量的增加,倾斜生长越明显,纳米棒的尺寸也逐渐减小。ZnO薄膜的禁带宽度随Ag掺杂含量的增加而降低,并可表达为Eg(eV)=3.12-0.0122xAg的线性关系。掺杂5%Ag的Ag-ZnO薄膜具有最大的载流子浓度,最高的迁移率和较小的电阻率,较好的电学性能。对催化活性较高的5%Ag-ZnO薄膜形貌修饰后,获得了高催化活性。采用金属柔性衬底Cu-GR,以In为掺杂元素利用简单水热法成功合成了不同In掺杂的In-ZnO/Cu-GR复合结构。研究结果表明:Cu-GR衬底和ZnO晶格失配导致ZnO纳米棒无法在衬底表面垂直生长。In-ZnO/Cu-GR复合结构的PL谱存在近紫外发光发射峰和可见光区的宽蓝色发射带;随着In掺杂浓度的增加,蓝色发射带峰强先增加再减小,而紫外发光峰基本不变,对光催化性能有着重要影响,峰强低,催化效果好。衬底和掺杂元素均对复合结构的催化活性有影响。利用简单水热法在Cu-GR柔性衬底上合成了具有特殊形貌的Ag掺杂梳状ZnO纳米结构,并对不同浓度Ag掺杂ZnO纳米结构演变机制进行了探讨。随着Ag掺杂量的增加,沉积在Cu-GR衬底上的ZnO表现出(101)择优取向,形成的ZnO纳米片为ZnO梳状结构的生长提供了位点。随着浓度的继续增加,ZnO形貌发生改变。Ag-ZnO/Cu-GR复合结构具有较好的催化活性,随着Ag掺杂含量的增加而增加,其性质与阻抗谱也有关系,阻抗谱电阻越小,光催化效果越好。
英文摘要：
ZnO,as a kind of photoelectric material with excellent performance,has been widely concerned by researchers all over the world in the past half century.With the development of nanotechnology,low dimensional ZnO nanostructures are attracted people's interest as the basic unit of building flexible optoelectronic devices.However,the ZnO exists defects,and it is usually impossible to apply directly.The band gap in ZnO plays an important role in the photoelectron properties and determines their application.The influence of doping on the band gap is often used to adjust the band gap to achieve new applications.With the development of thin film technology,a small number of flexible devices can be produced,such as bendable transistors and scalable circuits,which make it easier to manufacture electronic products.It is impossible to make a perfect flexible device without the combination of flexible materials.Therefore,it is necessary to explore the substrate materials suitable for ZnO in order to realize the application of ZnO film in flexible devices.In this paper,dopeing ZnO nanostructures were prepared on double-layer flexible substrates by simple hydrothermal method,and the influence of doping concentration variables on their properties were studied.The mechanism of morphology evolution,composite luminescence and photocatalysis of doped ZnO on flexible substrates were investigated.Three kinds of composite structures,Ag-ZnO/PET-GR,In-ZnO/Cu-GR and Ag-ZnO/Cu-GR,were mainly discussed,the main content of this paper:The Ag-ZnO/PET-GR composite structure with different Ag doping concentration was synthesized by ion sputtering assisted hydrothermal synthesis at low temperature.The results show that the Ag doping not only makes the ZnO surface loaded with Ag metal particles,but also makes the Ag element successfully enter into the ZnO lattice.The undoped and Ag doped ZnO deposited on PET-GR substrate will not change the morphology of Ag doped ZnO,both of which are nanorod structures.With the increaseing of the content,the influence of growth is more obvious,and the size of nanorods decreases gradually,which the diameter range is from 41 to 140 nm.The band gap of ZnO film decreases with the increase of Ag content,and can be expressed as a linear relationship of Eg(eV)= 3.12-0.0122 xAg.5%Ag-ZnO film hasbetter electrical properties owing to the largest carrier concentration,the highest mobility and the smaller resistivity.After the morphology modification of 5% Ag ZnO film with higher catalytic activity,a high photocatalytic activity material was obtained.Different In doping ZnO/Cu-GR composite structures were successfully synthesized by simple hydrothermal method with In as the doping element on the flexible metal substrate Cu-GR.The results show that the ZnO nanorods cannot be perpendicular to the substrate array due to the mismatch of Cu-GR substrate and ZnO lattice.The PL spectrum of In-ZnO/Cu-GR composite structure has near UV emission peak and wide blue emission band in visible light region.With the increase of In doping concentration,the peak intensity of blue emission band first increases and then decreases,while the UV emission peak is basically unchanged,which has a great relationship with the photocatalytic performance.The peak intensity is low and the catalytic effect is good.Both the substrate and the doping elements affect the catalytic activity of the composite structure.Ag-ZnO nanostructures with special morphology were synthesized on Cu-GR flexible substrate by simple hydrothermal method.The formation mechanism of the morphology evolution of Ag doped ZnO nanostructures deposited on Cu-GR flexible substrate with different concentrations of Ag was discussed by using other concentrations of Ag doped ZnO/Cu-GR composite structure besides the experimental design.With the increase of Ag content,ZnO deposited on Cu-GR substrate has(101)preferred-orientation,there are growth sites for the comb like structure of ZnO on the ZnO nanosheet array grown on Cu-GR substrate.And with the increase of the concentration,the morphology of ZnO also changed.Ag-ZnO/Cu-GR composite structure has good catalytic activity,which increases with the increase of Ag doping content.Its properties are also related to the impedance spectrum,which is the smaller the impedance spectrum resistance,the better the photocatalytic effect.
